lPC1788驱动SDRAM

 Sdram型号为hy57v256

#ifndef __SRAM_H_

#define __SRAM_H_

 

#include "common.h"

#include "delay.h"

#include "stdlib.h"

#include "debugserial.h"

 

 

#define SDRAM_DEBUG

 

#define SDRAM_BASE_ADDR     0xA0000000

#define SDRAM_SIZE          0x10000000

 

 

#define MHZ                 *10000001

 

#define SYS_FREQ            60//MHZ

 

#if   SYS_FREQ == (120)

#define SDRAM_PERIOD          8.33  // 96MHz

#elif     SYS_FREQ == (96)

#define SDRAM_PERIOD          10.4  // 96MHz

#elif   SYS_FREQ == (72)

#define SDRAM_PERIOD          13.8  // 72MHz

#elif   SYS_FREQ == (60)

#define SDRAM_PERIOD          16.67  // 60MHz

#elif   SYS_FREQ == (57)

#define SDRAM_PERIOD          17.4  // 57.6MHz

#elif SYS_FREQ == (48)

#define SDRAM_PERIOD          20.8  // 48MHz

#elif SYS_FREQ == (36)

#define SDRAM_PERIOD          27.8  // 36MHz

#elif SYS_FREQ == (24)

#define SDRAM_PERIOD          41.7  // 24MHz

#elif SYS_FREQ == (12)

#define SDRAM_PERIOD          83.3  // 12MHz

#else

#error Frequency not defined

#endif

 

#define P2C(Period)           (((Period<SDRAM_PERIOD)?0:(uint32_t)((float)Period/SDRAM_PERIOD))+1)

 

#define SDRAM_REFRESH         7813

#define SDRAM_TRP             20

#define SDRAM_TRAS            45

#define SDRAM_TAPR            1

#define SDRAM_TDAL            3

#define SDRAM_TWR             3

#define SDRAM_TRC             65

#define SDRAM_TRFC            66

#define SDRAM_TXSR            67

#define SDRAM_TRRD            15

#define SDRAM_TMRD            3

 

 

void sdram_io_init(void);

 

void sdram_init(void);

 

u8 sdram_text(void);

 

 

 

 

 

 

 

 

 

 

#endif

 

 

 

 

 

 

#include "sdram.h"

 

 

void sdram_io_init(void)

{

 

/************** init SDRAM **********/

    /* init EMC_CAS */

    LPC_IOCON->P2_16 = 0x21;

    /* init EMC_RAS */

    LPC_IOCON->P2_17 = 0x21;

    /* init EMC_CLK0 */

    LPC_IOCON->P2_18 = 0x21;

    /* init EMC_DYCS0 */

    LPC_IOCON->P2_20 = 0x21;

    /* init EMC_CKE0 */

    LPC_IOCON->P2_24 = 0x21;

    /* init EMC_DQM0 */

    LPC_IOCON->P2_28 = 0x21;

    /* init EMC_DQM1 */

    LPC_IOCON->P2_29 = 0x21;

    /* init EMC_DQM2 */

    LPC_IOCON->P2_30 = 0x21;

    /* init EMC_DQM3 */

    LPC_IOCON->P2_31 = 0x21;

 

 

  /************** init SDRAM DATA PIN**********/

    /* init EMC_D0 */

    LPC_IOCON->P3_0 = 0x21;

    /* init EMC_D1 */

    LPC_IOCON->P3_1 = 0x21;

    /* init EMC_D2 */

    LPC_IOCON->P3_2 = 0x21;

    /* init EMC_D3 */

    LPC_IOCON->P3_3 = 0x21;

    /* init EMC_D4 */

    LPC_IOCON->P3_4 = 0x21;

    /* init EMC_D5 */

    LPC_IOCON->P3_5 = 0x21;

    /* init EMC_D6 */

    LPC_IOCON->P3_6 = 0x21;

    /* init EMC_D7 */

    LPC_IOCON->P3_7 = 0x21;

    /* init EMC_D8 */

    LPC_IOCON->P3_8 = 0x21;

    /* init EMC_D9 */

    LPC_IOCON->P3_9 = 0x21;

    /* init EMC_D10 */

    LPC_IOCON->P3_10 = 0x21;

  /* init EMC_D11 */

    LPC_IOCON->P3_11 = 0x21;

    /* init EMC_D12 */

    LPC_IOCON->P3_12 = 0x21;

    /* init EMC_D13 */

    LPC_IOCON->P3_13 = 0x21;

    /* init EMC_D14 */

    LPC_IOCON->P3_14 = 0x21;

    /* init EMC_D15 */

    LPC_IOCON->P3_15 = 0x21;

    /* init EMC_D16 */

    LPC_IOCON->P3_16 = 0x21;

    /* init EMC_D17 */

    LPC_IOCON->P3_17 = 0x21;

    /* init EMC_D18 */

    LPC_IOCON->P3_18 = 0x21;

    /* init EMC_D19 */

    LPC_IOCON->P3_19 = 0x21;

    /* init EMC_D20 */

    LPC_IOCON->P3_20 = 0x21;

    /* init EMC_D21 */

    LPC_IOCON->P3_21 = 0x21;

    /* init EMC_D22 */

    LPC_IOCON->P3_22 = 0x21;

    /* init EMC_D23 */

    LPC_IOCON->P3_23 = 0x21;

    /* init EMC_D24 */

    LPC_IOCON->P3_24 = 0x21;

    /* init EMC_D25 */

    LPC_IOCON->P3_25 = 0x21;

    /* init EMC_D26 */

    LPC_IOCON->P3_26 = 0x21;

    /* init EMC_D27 */

    LPC_IOCON->P3_27 = 0x21;

    /* init EMC_D28 */

    LPC_IOCON->P3_28 = 0x21;

    /* init EMC_D29 */

    LPC_IOCON->P3_29 = 0x21;

    /* init EMC_D30 */

    LPC_IOCON->P3_30 = 0x21;

    /* init EMC_D31 */

    LPC_IOCON->P3_31 = 0x21;

 

  /************** init SDRAM ADDR PIN**********/

    /* init EMC_A0 */

    LPC_IOCON->P4_0 = 0x21;

    /* init EMC_A1 */

    LPC_IOCON->P4_1 = 0x21;

    /* init EMC_A2 */

    LPC_IOCON->P4_2 = 0x21;

    /* init EMC_A3 */

    LPC_IOCON->P4_3 = 0x21;

    /* init EMC_A4 */

    LPC_IOCON->P4_4 = 0x21;

    /* init EMC_A5 */

    LPC_IOCON->P4_5 = 0x21;

    /* init EMC_A6 */

    LPC_IOCON->P4_6 = 0x21;

    /* init EMC_A7 */

    LPC_IOCON->P4_7 = 0x21;

    /* init EMC_A8 */

    LPC_IOCON->P4_8 = 0x21;

    /* init EMC_A9 */

    LPC_IOCON->P4_9 = 0x21;

    /* init EMC_A10 */

    LPC_IOCON->P4_10 = 0x21;

    /* init EMC_A11 */

    LPC_IOCON->P4_11 = 0x21;

    /* init EMC_A12 */

    LPC_IOCON->P4_12 = 0x21;

    /* init EMC_A13 */

    LPC_IOCON->P4_13 = 0x21;

    /* init EMC_A14 */

    LPC_IOCON->P4_14 = 0x21;

 

  /************** init SDRAM WE PIN**********/

    /* init EMC_WE */

    LPC_IOCON->P4_25 = 0x21;

}

 

 

 

void sdram_init(void)

{

    volatile u32 i;

    volatile unsigned long Dummy;

    LPC_SC->PCONP       |= (1<<11);//使能emc模块

    //初始化IO

    sdram_io_init();

    //设置命令延迟时间 芯片数据手册上有标准

    LPC_SC->EMCDLYCTL |= (8<<0);

    //设置输入数据采样延迟

    LPC_SC->EMCDLYCTL |=(8<<8);

    //设置时钟输出延迟

    LPC_SC->EMCDLYCTL |= (0x08 <<16);

    //使能emc 正常地址映射 正常模式非低功耗模式

    LPC_EMC->Control =1;

    //读取配置设置为命令延迟策略

    LPC_EMC->DynamicReadConfig = 1;

    //设置ras延时为3个clk cas延时为3 以下设置都需要根据SDRAM数据手册来设置

    LPC_EMC->DynamicRasCas0 = 0;

    LPC_EMC->DynamicRasCas0 |=(3<<8);

    LPC_EMC->DynamicRasCas0 |= (3<<0);

    //设置预充电的时钟延迟 20us

    LPC_EMC->DynamicRP = P2C(20);

    //设置选中到预充电的命令周期 45us

    LPC_EMC->DynamicRAS = P2C(45);

    //设置自刷新退出时间

    LPC_EMC->DynamicSREX = P2C(67);

    //最后数据输出到有效命令时间

    LPC_EMC->DynamicAPR = 1;

    //选择数据到有效命令时间

    LPC_EMC->DynamicDAL = SDRAM_TDAL+P2C(20);

    //写入恢复时间 3

    LPC_EMC->DynamicWR = 3;

    //选择有效到有效命令周期

    LPC_EMC->DynamicRC = P2C(65);

    //选择自刷新周期

    LPC_EMC->DynamicRFC = P2C(66);

    //自刷新到有效命令时间

    LPC_EMC->DynamicXSR = P2C(67);

    //选择有效组A到组B的延时

    LPC_EMC->DynamicRRD = P2C(15);

    //装载模式寄存器到有效时间

    LPC_EMC->DynamicMRD = 3;

    //选择cs0的配置

    /*4:3  = 00     = SDRAM

    12:7 = 001001   = 128 Mb (8Mx16), 4 banks, row length = 12, column length = 9

    14   = 1      = 32bit

    0100 0100 1000 0000

    32bit 128 Mb (8Mx16), 4 banks, row length = 12, column length = 9*/

    LPC_EMC->DynamicConfig0 = 0x0004480;

 

    //时钟受高电平驱动,clkout持续运行  发出nop命令

    LPC_EMC->DynamicControl = 0x0183;

    //等待一段时间让sdram启动

    for(i= 200*40; i;i--);

    //发布pall指令,预充电

    LPC_EMC->DynamicControl = 0x0103;

 

    //首先设置动态刷新周期为32个clk

    LPC_EMC->DynamicRefresh = 2;

    //等待至少128个clk

    for(i= 256; i; --i); // > 128 clk

    //设置新的动态刷新周期

    LPC_EMC->DynamicRefresh = P2C(SDRAM_REFRESH) >> 4;

 

    //发布mode指令

    LPC_EMC->DynamicControl    = 0x00000083;

    //进行一次伪读取

    Dummy = *((volatile u32 *)(SDRAM_BASE_ADDR | (0x32<<13)));

 

    // 进入normal模式 自刷新时钟禁止 空闲时钟禁止 正常操作非掉电

    LPC_EMC->DynamicControl = 0x0000;

    //使能芯片缓冲

    LPC_EMC->DynamicConfig0 |=(1<<19);

    for(i = 100000; i;i--);

}

 

 

 

 

u8 sdram_text(void)

{

    u32 i;

   

    volatile u32 *wr_ptr;

    volatile u8 *char_wr_ptr;

   

    wr_ptr = (u32 *)SDRAM_BASE_ADDR;

    char_wr_ptr = (u8 *)wr_ptr;

 

    for (i=0; i<(SDRAM_SIZE/4)/1024; i++)

    {

      *char_wr_ptr++ = 0x11;

      *char_wr_ptr++ = 0x22;

      *char_wr_ptr++ = 0x33;

      *char_wr_ptr++ = 0x44;

    }

 

    wr_ptr = (u32 *)SDRAM_BASE_ADDR;

   

    for ( i= 0; i < (SDRAM_SIZE/8)/1024; i++ )

    {

        if ( *wr_ptr != 0x44332211 )    /* be aware of endianess */

        {

            return 1;

        }

        wr_ptr++;

    }

 

    return 0;

}